BT137 series 26/09/2012 comset semiconductors 1 | 3 semiconductors triacs absolute maximum ratings symbol ratings value unit BT137-500 BT137-600 BT137-800 v drm repetitive peak off-state voltage 500 600 800 v v rrm repetitive peak reverse voltage 500 600 800 i t(rms) rms on-state current 8 a i tsm non-repetitive peak on- state current 65 a p gm peak gate power 5 w pg (av) average gate power 0.5 w t st g storage temperature range -45 to +150 c t j operating junction temperature 110 c thermal characteristics symbol ratings value unit r ? j -mb thermal resistance junction to mounting base 2 c/w r ? j a thermal resistance junction to ambient 60 feature glass passivated triacs in a plastic to220 package. they are intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial and domestic lighting, heating and static switching . compliance to rohs. http://www..net/ datasheet pdf - http://www..net/
BT137 series 26/09/2012 comset semiconductors 2 | 3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v drm repetitive peak off-state voltage i d = 0.1 ma BT137-500 500 - - v BT137-600 600 - - BT137-800 800 - - v rrm repetitive peak reverse voltage i d = 0.5 ma BT137-500 500 - - BT137-600 600 - - BT137-800 800 - - i gt gate trigger current v d = 12 v r l = 100 ? t2+ g+ - - 10 ma t2+ g- - - 10 t2- g- - - 10 t2- g+ - - 25 v gt gate trigger voltage v d = 12 v r l = 100 ? t2+ g+ - - 1.5 v t2+ g- - - 1.5 t2- g- - - 1.5 t2- g+ - - 1.8 i l latching current v d = 12 v i gt = 100 ma t2+ g+ - - 45 ma t2+ g- - - 60 t2- g- - - 45 t2- g+ - - 60 i h holding current i t = 200 ma, i gt = 50 ma - - 50 ma i d off-state leakage current v d = v drm max t j = 125c - - 0.5 ma v t on-state voltage i t = 20 a - - 1.6 v dv d /dt critical rate of rise of off-state voltage v dm = 67% v drmmax t j = 125c exponential waveform; gate open circuit 100 250 - v/s dv com /dt critical rate of rise of change commutatating current v d = 400 v; t j = 95 c di com /dt = 3.6 a/ms; i t = 8 a gate open circuit - 20 - v/s t gt gate controlled turn-on time i tm = 12 a; v d = v drmmax i g = 0.1 a; di g /dt = 5 a/ s - 2 - s http://www..net/ datasheet pdf - http://www..net/
BT137 series 26/09/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : main terminal 1 pin 2 : main terminal 2 pin 3 : gate case : main terminal 2 http://www..net/ datasheet pdf - http://www..net/
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